Polarization Characteristics of Electroluminiscence, that Accompanies Electric Breakdown of p–n-Structures on Silicon Carbide

Abstract

Spectral dependence of the linear polarization extent of electroluminicsence, which accompanies the electric breakdown of alloyed p–n-structures, made on the base of SiC–4Н, 6Н, 15R polytypes, and аlso cubic silicon carbide in the range of 1,4–3,8 еВ have been obtained for the first time. The structures have been placed on the crystal faces, which are parallel and perpendicular to the crystallographic axis С. The luminescence was lead out from the side of thin р-region perpendicularly, and also at the sharp angle to the operating crystal face. The components of luminescence which are polarized linearly in the parallel and perpendicular to the crystallographic axis С (Е||С, Е^С) plane, and also parallel to the vector F of electric field tensity in the p–n-junction (Е||F) have been revealed. Spectral location and intensity of the component, connected with direction of the axis С, have essential differences in different polytypes. Common feature for all polytypes is the presence of polarization (with the level of 0,3–0,4) in the plane Е||С in the region of fundamental absorption and in the adjoining region. Accordance of polarization characteristic of luminicsence to the date on optical absorption takes place only in the separate cases. Polarization Е||F reaches the level 0,5 and tends to increase in the side of increasing of photon energy.